FDG6322C
Manufacturer:
On Semiconductor
Mfr.Part #:
FDG6322C
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel, P-Channel number of channels:2 300 mW 25 V Continuous Drain Current (ID):410 mA 400 pC, 1.5 nC
| Parameter | Value |
|---|---|
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 4 Ω |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 220 mA |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Threshold Voltage | 850 mV |
| Number of Channels | 2 |
| Input capacitance | 9.5 pF |
| Continuous Drain Current (ID) | 410 mA |
| Rds On Max | 4 Ω |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Dual |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Gate Charge | 400 pC, 1.5 nC |
| Drain to Source Resistance | 4 Ω |
| Nominal Vgs | 850 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 650 mV, 1.5 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 907
Distributors
pcbx
pcbxUnit Price$0.38170
Ext.Price$0.38170
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.38170 | $0.38170 |
| 10 | $0.30144 | $3.01440 |
| 25 | $0.27405 | $6.85125 |
| 50 | $0.24915 | $12.45750 |
| 100 | $0.22650 | $22.65000 |
| 300 | $0.21633 | $64.89900 |
| 500 | $0.20661 | $103.30500 |
| 1000 | $0.19594 | $195.94000 |